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• W579211899 abstract "Bonding-pad electrode-area-etched AlGaN/GaN on a Si-based Schottky barrier diode (SBD) is fabricated. Electrode mesa etching leads to reverse bias leakage current about one order of magnitude lower than that of SBD without electrode mesa etching, but forward currents do not vary greatly, compared with that in conventional SBD, which has no electrode mesa etching." @default.
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• W579211899 date "2015-06-09" @default.
• W579211899 modified "2023-10-14" @default.
• W579211899 title "Low leakage current AlGaN/GaN on Si-based Schottky barrier diode with bonding-pad electrode mesa etching" @default.
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• W579211899 doi "https://doi.org/10.7567/jjap.54.070302" @default.
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