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• W583283591 abstract "Beta phase Gallium trioxide (β-Ga2O3) thin film was grown by metal organic chemical vapor deposition technology. Mixture gases of SF6 and Ar were used for dry etching of β-Ga2O3 thin film by inductively coupled plasma (ICP). The effect of SF6/Ar (etching gas) ratio on etch rate and film etching damage was studied. The etching rate and surface roughness were measured using F20-UN thin film analyzer and atomic force microscopy showing that the etching rate in the range between 30 nm/min and 35 nm/min with an improved surface roughness was obtained when the reactive mixed gas of SF6/Ar was used. The analysis of X-ray diffraction and transmission spectra further confirmed the non-destructive crystal quality. This work demonstrates that the properly proportioned mixture gases of SF6/Ar is suitable for the dry etching of β-Ga2O3 thin film by ICP and can serve as a guide for future β-Ga2O3 device processing." @default.
• W583283591 created "2016-06-24" @default.
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• W583283591 date "2015-11-01" @default.
• W583283591 modified "2023-10-15" @default.
• W583283591 title "A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film" @default.
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• W583283591 doi "https://doi.org/10.1016/j.mssp.2015.05.065" @default.
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