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• W59111298 abstract "Infra-red photoluminescence (PL) spectra of zinc and copperrelated defects in silicon are presented in this thesis.Seven new PL systems with principal zero phonon linesat 919.8, 943.67, 945.8, 1033.5, 1059.9, 1090.7 and 1129.8meV are discussed. All of the spectra can be classified asbeing due to isoelectronic bound exciton ( IBE )recombination. Although the identities of the binding centreshave not been conclusively established clear evidence hasbeen obtained in most cases for the involvement of at leastone specific transition metal ( TM ) impurity element.The PL systems at 945.8, 919.8 and 1059.9 meV are allobserved in silicon diffused with zinc and another TM. The945.8 meV system is observed in silicon diffused with zinc at1100° C for 16 hours. The system is not created byinterstitial Mn and substitutional Zn as previouslysuggested. The 919 meV system is observed in siliconco-diffused with zinc and copper at 1100° C for 16 hours,while the 1059.9 meV system is most clearly observed inSisFeZn quenched from 1000° C.For silicon implanted with zinc the 1129.8 and 1090.7 meVsystems are observed. Both of these systems have ground stateand excited state splittings placing them in a minority groupof IBE centres in silicon associated with deep acceptors andincluding the indium and thallium systems.The quenching rate is found to be crucial for samplesdiffused with copper only. Slow quenches produce the 1034 meVSK system. Zeeman studies on the zero phonon lines of thiscentre reveal a singlet - triplet nature indicative of astrong central cell potential about the defect as well as astrong crystal field reaction. Rapid quenches combined with*low copper concentrations produces the 943.7 Cu PL system.Uniaxial stress and magnetic field measurements on thiscentre suggest that the two lowest energy transitions arisefrom bound exciton recombination at a defect with tetrahedralor near tetrahedral symmetry. Diffusion rate calculationsshow that a single interstitial copper atom is not the mostlikely configuration . A larger defect involving one or more atoms in a Td arrangement is more likely, perhaps similar toto those already reported for the Mn4 and Li^ defects in PLand for the NL22 Fe related centre in EPR.It is concluded that diffusion is not a suitable method ofintroducing transition metal impurities into silicon sincethe process is extremely susceptible to contamination.Implantation of the desired element followed by rapid thermalannealing is suggested as a much more promising avenue ofinvestigation since this method affords much more controlover the concentration, implantation depth and mostimportantly of all, the identity of the chemical elementintroduced into the host crystal." @default.
• W59111298 created "2016-06-24" @default.
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• W59111298 date "1989-01-01" @default.
• W59111298 modified "2023-09-27" @default.
• W59111298 title "Luminescence studies of transition metal related defects in crystalline silicon" @default.
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