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- W60089581 abstract "Ionized-cluster beam (ICB) deposition has been employed to prepare zinc phosphide (Zn 3 P 2 ) thin films. Deposition rate of Zn 3 P 2 films increases monotonically with increasing an acceleration voltage and resistivity of the films increases from 10 4 to of the order of 10 5 ωcm by the acceleration of 0.8 kV. The deposition rate indicates a maximum at growth temperature around 120°C; then, it decreases with increasing growth temperature because of a re-evaporation effect. The resistivity is constant at about 10 6 ωcm below the growth temperature of 150°C and decreases above 150°C because of a preferential orientation along c-axis. Both the deposition rate and resistivity of Zn 3 P 2 films depend on the total surface area of source material causing a change of effusion rate." @default.
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- W60089581 date "1994-01-01" @default.
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- W60089581 title "Zn3P2 thin film growth by ionized-cluster beam deposition" @default.
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- W60089581 doi "https://doi.org/10.1016/b978-0-444-81994-9.50058-0" @default.
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