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- W603965229 abstract "2/Ar flow ratio in the reactive sputtering process, the annealing temperature, the ZrO2 film thickness on the structure, the surface roughness of ZrO2 films and the electric properties of Pt/ZrO2/Si metal-oxide-semiconductor (MOS) capacitors were investigated. The optimum process parameters of the Pt/ZrO2/Si capacitor based on reactively sputtered-ZrO2 determined in such a way as the capacitance is maximized and the leakage current, the oxide charge, and the interface trap density are minimized that is the O2/Ar flow ratio of 1.5, the annealing temperature of 800 ‐ C, and the film thickness of 10 nm. Also the conduction mechanism in the Pt/ZrO2/Si capacitor has been discussed." @default.
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- W603965229 date "2009-10-10" @default.
- W603965229 modified "2023-09-24" @default.
- W603965229 title "Electrical Properties of Sputter-deposited ZrO2-based Pt/ZrO2/Si Capacitors" @default.
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