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- W613388650 abstract "Tunnel Diode/Transistor Differntial Comparator (Q Liu) Stable High Power GaN-on-GaN HEMT (KK Chu) Noise Characteristics of Field-Plated GaN HEMTs (Y-F Wu) Simulation Study on Breakdown Behavior of Field-Plated SiC MESFETs (H Y Cha) Thick GaN Layer Grown by Ga Vapor Transport Technique (H Wu) Native Defect Compensation in III-Antimonide Bulk Substrates (R Pino) Electrical Effects of DNA Molecules on Silicon Field Effect Transistor (G Xuan) Noise Characteristics of 340 nm and 280 nm GaN-Based Light Emitting Diodes (S Sawyer) Omni-Directional Reflector Using a Low Refractive Index Material (J-Q Xi) Self-Guiding in Low-Index-Contrast Planar Photonic Crystals (C Chen) and other papers." @default.
- W613388650 created "2016-06-24" @default.
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- W613388650 date "2005-01-01" @default.
- W613388650 modified "2023-09-23" @default.
- W613388650 title "High performance devices : proceedings of the 2004 IEEE Lester Eastman Conference on High Performance Devices, Rensselaer Polytechnic Institute, 4-6 August 2004" @default.
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