Matches in SemOpenAlex for { <https://semopenalex.org/work/W613984988> ?p ?o ?g. }
Showing items 1 to 85 of
85
with 100 items per page.
- W613984988 endingPage "1815" @default.
- W613984988 startingPage "1810" @default.
- W613984988 abstract "Intrinsic hydrogenated amorphous silicon a-Si:H(i) offers a very good passivation quality. Adding dopants to the deposition reduces the passivation quality. However, sufficient doping is needed to build the p-n-junction which is essential to gain an actual voltage. Furthermore, the conductivity of the a-Si:H is also a function of the dopant concentration. Poor conductivities in the emitter layer causes high serial resistances, limiting fill factor and cell efficiency. To achieve a good passivation quality, sufficient band bending and low resistivity simultaneously, we have introduced a new approach of applying a doping profile to the deposition of the amorphous emitter layer. The conventional concept to process silicon heterojunction (SHJ) solar cells is to deposit a heavily doped a:Si-H(n or p) layer on a thin intrinsic one. In this paper we will compare structures with gradually doped emitter profiles to conventional ones. Gradually doped emitters are processed in one single deposition step, which offers simple and fast processing. The total electrical conductivity can be increased by a well chosen doping profile. This is shown by simulations based on conductivity measurements and full heterojunction solar cells. The best n-type, FZ wafer heterojunction solar cell realized within this first investigation has an efficiency of 18.9%." @default.
- W613984988 created "2016-06-24" @default.
- W613984988 creator A5021144433 @default.
- W613984988 creator A5032548977 @default.
- W613984988 creator A5035734103 @default.
- W613984988 creator A5048748769 @default.
- W613984988 creator A5061931322 @default.
- W613984988 creator A5067617387 @default.
- W613984988 creator A5091399526 @default.
- W613984988 date "2010-10-28" @default.
- W613984988 modified "2023-09-23" @default.
- W613984988 title "OPTIMIZATION AND ANALYSIS OF DEPOSITION PROCESSES OF AMORPHOUS SILICON FOR SILICON HETEROJUNCTION SOLAR CELLS" @default.
- W613984988 doi "https://doi.org/10.4229/25theupvsec2010-2cv.2.27" @default.
- W613984988 hasPublicationYear "2010" @default.
- W613984988 type Work @default.
- W613984988 sameAs 613984988 @default.
- W613984988 citedByCount "1" @default.
- W613984988 countsByYear W6139849882015 @default.
- W613984988 crossrefType "proceedings-article" @default.
- W613984988 hasAuthorship W613984988A5021144433 @default.
- W613984988 hasAuthorship W613984988A5032548977 @default.
- W613984988 hasAuthorship W613984988A5035734103 @default.
- W613984988 hasAuthorship W613984988A5048748769 @default.
- W613984988 hasAuthorship W613984988A5061931322 @default.
- W613984988 hasAuthorship W613984988A5067617387 @default.
- W613984988 hasAuthorship W613984988A5091399526 @default.
- W613984988 hasConcept C160671074 @default.
- W613984988 hasConcept C171250308 @default.
- W613984988 hasConcept C191952053 @default.
- W613984988 hasConcept C192562407 @default.
- W613984988 hasConcept C26953177 @default.
- W613984988 hasConcept C2776390347 @default.
- W613984988 hasConcept C2779227376 @default.
- W613984988 hasConcept C2779667780 @default.
- W613984988 hasConcept C2780824857 @default.
- W613984988 hasConcept C33574316 @default.
- W613984988 hasConcept C46918542 @default.
- W613984988 hasConcept C49040817 @default.
- W613984988 hasConcept C544956773 @default.
- W613984988 hasConcept C57863236 @default.
- W613984988 hasConcept C79794668 @default.
- W613984988 hasConceptScore W613984988C160671074 @default.
- W613984988 hasConceptScore W613984988C171250308 @default.
- W613984988 hasConceptScore W613984988C191952053 @default.
- W613984988 hasConceptScore W613984988C192562407 @default.
- W613984988 hasConceptScore W613984988C26953177 @default.
- W613984988 hasConceptScore W613984988C2776390347 @default.
- W613984988 hasConceptScore W613984988C2779227376 @default.
- W613984988 hasConceptScore W613984988C2779667780 @default.
- W613984988 hasConceptScore W613984988C2780824857 @default.
- W613984988 hasConceptScore W613984988C33574316 @default.
- W613984988 hasConceptScore W613984988C46918542 @default.
- W613984988 hasConceptScore W613984988C49040817 @default.
- W613984988 hasConceptScore W613984988C544956773 @default.
- W613984988 hasConceptScore W613984988C57863236 @default.
- W613984988 hasConceptScore W613984988C79794668 @default.
- W613984988 hasLocation W6139849881 @default.
- W613984988 hasOpenAccess W613984988 @default.
- W613984988 hasPrimaryLocation W6139849881 @default.
- W613984988 hasRelatedWork W1587257082 @default.
- W613984988 hasRelatedWork W1591778892 @default.
- W613984988 hasRelatedWork W1972679491 @default.
- W613984988 hasRelatedWork W1978728269 @default.
- W613984988 hasRelatedWork W1987821935 @default.
- W613984988 hasRelatedWork W2042516636 @default.
- W613984988 hasRelatedWork W2042834076 @default.
- W613984988 hasRelatedWork W2140256310 @default.
- W613984988 hasRelatedWork W2171471863 @default.
- W613984988 hasRelatedWork W2189026493 @default.
- W613984988 hasRelatedWork W2200136926 @default.
- W613984988 hasRelatedWork W2529874092 @default.
- W613984988 hasRelatedWork W2582320501 @default.
- W613984988 hasRelatedWork W2890186289 @default.
- W613984988 hasRelatedWork W2902609793 @default.
- W613984988 hasRelatedWork W2943840796 @default.
- W613984988 hasRelatedWork W3004828969 @default.
- W613984988 hasRelatedWork W3119581781 @default.
- W613984988 hasRelatedWork W3141304127 @default.
- W613984988 hasRelatedWork W3196911132 @default.
- W613984988 isParatext "false" @default.
- W613984988 isRetracted "false" @default.
- W613984988 magId "613984988" @default.
- W613984988 workType "article" @default.