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- W614428965 abstract "1 ABSTRACT — We present optical and structural studies of state-of-the-art InxGa1-xN thin films grown by molecular beam epitaxy (MBE) (31%<x<75%) on a GaN buffer layer. Photoluminescence (PL) is used to evaluate the band-gap of InxGa1-xN in terms of an empirical bowing-like formula. The obtained bowing parameter is b = 1.36 eV. For comparison purposes, we also perform PL measurements on InxGa1-xN samples (x<25%) grown by metal organic chemical vapour deposition. The results indicate the presence of a good crystallinity and homogeneity of our state-of-the-art MBE samples. Phase separation at the microscale range is reported by means of cathodoluminescence (CL). The obtained PL and CL luminescence emission energies are very similar under different conditions of temperature. Further analysis of this result concludes that the optical emission of InxGa1-xN exhibits the so-called S-shape behaviour. In addition, the potential effect of residual strain and composition fluctuations on the luminescence measurements are discussed. We also perform Raman measurements to study the two sets of samples, one grown by MBE and another one grown by metal organic chemical vapour deposition (MOCVD). A1(LO) and E2 vibrational modes are observed and vary following the one mode behaviour. The existence of a secondary peak below the A1(LO) mode is discussed in terms of a disorder-activated mode. We observe that the A1(LO) phonon mode is shifted around 35cm above the expected values. This result is attributed to be a consequence of compressive residual strain. The resonance behaviour of the A1(LO) mode is experimentally verified and studied under two different laser light energies, one close to the resonance case (Elight=2.41 eV) and another one far from the resonance regime (Elight=3.8 1eV). Under green visible light the A1(LO) phonon frequency is observed to be higher than when the sample is excited with UV light. Different hypothesis are presented in this work in order to explain this result." @default.
- W614428965 created "2016-06-24" @default.
- W614428965 creator A5053014797 @default.
- W614428965 date "2010-12-09" @default.
- W614428965 modified "2023-09-27" @default.
- W614428965 title "Optical emission and Raman scattering in InGaN thin films grown by molecular beam epitaxy" @default.
- W614428965 hasPublicationYear "2010" @default.
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