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- W616038862 abstract "In the last few years, several efforts have been made to overcome the main limitations of the classical twodimensional, drift-diffusion model; on the one hand, more sophisticated transport theories have been worked out: among them, the model [1] was given much attention, and two-dimensional simulators implementing such a model were developed. On the other hand, three-dimensional drift-diffusion codes have been written, with the aim of predicting new geometry effects related to the three-dimensional nature of real devices. However, energy-activated phenomena ajid geometry effects are likely to interact; hence the need for a three-dimensional formulation of advanced transport models [2]. In this paper, a hydrodynamic version of the three-dimensional code HFIELDS-3D is used to achieve a detailed knowledge on the distribution of the substrate current inside a recessed-oxide MOSFET. In the current version, HFIELDS-3D solves the equations of the model described, e.g., in [3]; the discretization technique proposed in [4] has been generedized to the three-dimensional case, using prisms diS fundamental elements [5]. A single-carrier, coupled solution has been worked out for Poisson's and currentcontinuity equations, while an outer, decoupled loop takes care of the energy-balance equation. Temperaturedependent impact-ionization rates have been used, according to the model proposed in [6]. An MOS transistor with fully recessed isolation oxide was simulated using HFIELDS-3D. Fig. 1 shows its geometrical features as well as the discretization mesh. As shown by Akers [7], the edge in such devices lets the current crowd at the periphery of the channel, so that threshold voltage shifts downward. This is referred to as the inverse narrow-width effect (INWE). As impact ionization rate at the drain-end of the channel depends on current density, the substrate current is expected to be nonuniform ttcross the channel as well. This straightforward consideration, however, does not fully justify the discrepancies between twoand threedimensional simulation results shown in fig. 2, where much larger differences are found to occur in substrate current compared with drain current. The source of such discrepancies is made clearer in fig. 3, where the ratio:" @default.
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- W616038862 date "1992-02-25" @default.
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- W616038862 title "Three-Dimensional Evaluation of Substrate Current in Recessed-Oxide MOSFETs" @default.
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