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- W616252006 abstract "The electrical characteristics of a series of AlInN high-electron-mobility transistors (HEMTs) with a GaN cap layer ranging from 0 to 26 nm are investigated for power switching applications. The breakdown voltage (VB), mobility of two-dimensional electron gas, on-state resistance (Ron), and dynamic Ron of the HEMTs are improved by increasing the cap layer thickness. The improved electrical characteristics are attributed to the GaN cap layer, which not only reduces the surface E-field but also raises the conduction band of the barrier layer and effectively prevents electrons from being trapped in the AlInN barrier and above." @default.
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- W616252006 date "2015-06-01" @default.
- W616252006 modified "2023-10-17" @default.
- W616252006 title "Improving the off-state characteristics and dynamic on-resistance of AlInN/AlN/GaN HEMTs with a GaN cap layer" @default.
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- W616252006 doi "https://doi.org/10.7567/apex.8.064102" @default.
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