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- W616791040 abstract "The ErSi2 nanowires were formed on Si (110) substrates by a self-assembled growth process without a high vacuum system. All of the nanowires were highly parallel and along the Si [1-10] direction. It was shown by structural analysis that the nanowires consisted of two types, which showed a similar surface morphology. The first type is ErSi2 nanowires buried into the Si substrate by a depth of 30nm, and the other is ErSi2 thin layers covering on wire-like Si surface. The later is suggested to be the remained structure after evaporation of the first type wires during the high temperature annealing." @default.
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- W616791040 date "2007-01-01" @default.
- W616791040 modified "2023-10-17" @default.
- W616791040 title "Structure Analysis of Self-Assembled ErSi2 Nanowires Formed on Si(110) Substrates" @default.
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- W616791040 doi "https://doi.org/10.1541/ieejeiss.127.1294" @default.
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