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- W620521793 abstract "In the recent years, localization of subtle defects has required device electrical data. Nanoprobing systems based on scanning electron microscopy (SEM) or atomic force microscopy (AFM) have become a significant tool for device measurement in failure analysis (FA) Labs. Failure Analysts can use electrical characteristics to isolate failure location in the metal–oxide–semiconductor field-effect-transistor (MOSFET). The missing lightly doped drain (LDD) implant is an example of a critical failure mechanism for the MOSFET and cell in the SRAM which is localized using nanoprobing. In this article, device data analysis and theoretical deductions are discussed related to missing LDD doping. Device data is used to propose a full set of characteristic for missing LDD. The simulation from a mature tool is able to support the electrical characteristics. The capability and challenge of the following physical FA to reveal the defect are also discussed." @default.
- W620521793 created "2016-06-24" @default.
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- W620521793 date "2015-07-01" @default.
- W620521793 modified "2023-09-23" @default.
- W620521793 title "The device characteristics of missing LDD implantation via nanoprobing techniques for localized failure analysis" @default.
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- W620521793 doi "https://doi.org/10.1016/j.microrel.2015.05.015" @default.
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