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• W62434109 abstract "One of the most important parameters which determine the performance of many modern devices based on amorphous semiconductors is the drift mobility-lifetime product, μτ. There has been much interest in determination of charge-carrier ranges in amorphous semiconductors by various measurement techniques. Although the mobility, μ, can be measured by the conventional time-of-flight transient-photoconductivity technique, the determination of the lifetime, τ, is often complicated by both experimental and theoretical limitations. The present chapter provides an overview of xerographic measurements as a tool for studying the electrical properties of amorphous semiconductors. First, details of the experimental set-up are discussed. Thereafter, the analysis and interpretation of dark discharge, the first-cycle residual potential, cycled-up saturated residual potential are considered. It is shown that from such measurements the charge-carrier lifetime, τ, the range of the carriers, μτ, and the integrated concentration of deep traps in the mobility gap can be readily and accurately determined. Xerographic measurements on Se-rich amorphous photoconductors have indicated the presence of relatively narrow distribution of deep hole traps with integrated density of about 1013 cm−3. These states are located at ~0.85 eV from the valence band. A good correlation was observed between the residual potential and the hole range, in agreement with the simple Warter expression. The capture radius is estimated to be rc=2−3 Å. Since rc for pure a-Se and a-AsxSe1-x is comparable to the Se–Se interatomic bond length in a-Se, it can be suggested that deep hole trapping centers in these chalcogenide semiconductors are neutral-looking defects, possibly of intimate valence-alternation pair (IVAP) in nature. The absence of any electron spin resonance signal (ESR) at room temperature seemed to be a strong argument in favor of this suggestion. Finally, photoinduced effects on xerographic parameters are discussed. It has been shown that photoexcitation of a-AsxSe1-x amorphous films with band-gap light alters deep hole and electron states. During room-temperature annealing photosensitized states relax to equilibrium. Recovery process becomes slower with increasing As content. Qualitative explanation of the observed behavior may be based on associating the deep states with C3+and C1− IVAP centers." @default.
• W62434109 created "2016-06-24" @default.
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• W62434109 date "2014-01-01" @default.
• W62434109 modified "2023-09-25" @default.
• W62434109 title "Effects of Charge Carrier Trapping on Detector Performance" @default.
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• W62434109 doi "https://doi.org/10.1016/b978-0-12-417021-6.00006-x" @default.
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