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• W62705090 abstract "This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observed. In terms of charge trapping charged hadrons seem to be more damaging than neutrons. An increase of hole trapping and a decrease of electron trapping was revealed during annealing. The formation of induced current depends strongly on electricfield which is determined by effective dopant concentration. The latter was checked for non- uniformity during the reverse annealing. In high resistivity neutron irradiated detectors no significant deviations from uniform effective doping concentration was observed. The increase of efective dopant concentration with fluence becomes the most important limiting factor for successful operation of heavily irradiated detectors. A significant reduction of effective dopant concentration was achieved by continuous illumination of n+ detector side with red light. In that way enhanced hole concentration in detector bulk is established causing changes in deep levels' contribution to the space charge. At given temperature and bias voltage illumination intensity can be fine tuned to reach optimal point of operation where effective dopant concentration is zero. In this way heavily irradiated detectors thicker than usual 300 m can be fully efficient. An attempt was also made to determine the dominant electron and hole trap levels and their generation rates by combining the results of effective dopant concentration measurements in the presence of enhanced carrier concentration and measurements of effective carrier trapping times. The observation of signals from 90Sr source in the p+-n-n+ micro-strip detectors connected to SCT32A read-out chip showed that voltage much higher than full depletion voltage is needed for high charge collection efficiency. This was checked throughout the beneficial and reverse annealing. The most probable signal decreased with time as expected from the measurements of the effective trapping times. A detailed simulation was employed aiming to predict the influence of effective trapping times on induced charge. The electronic processing of the induced current was also taken into account thus enabling the simulation of strip detectors connected to read-out chip. A good agreement between measured and simulated data was found. A number of other results were obtained, among which the most interesting ones are: prediction of ballistic deficit importance, comparison of strip detectors iv with p+ and n+ strips, detector thickness optimization and prediction of induced charge appearance on neighboring strips. Finally, appearance of bistable damage upon applying the bias to an irradiated detector was confirmed by TCT measurements. The results are in agreement with those previously measured with the C-V technique." @default.
• W62705090 created "2016-06-24" @default.
• W62705090 creator A5057055046 @default.
• W62705090 date "2001-06-21" @default.
• W62705090 modified "2023-09-28" @default.
• W62705090 title "Signal development in irradiated silicon detectors" @default.
• W62705090 hasPublicationYear "2001" @default.
• W62705090 type Work @default.
• W62705090 sameAs 62705090 @default.
• W62705090 citedByCount "10" @default.
• W62705090 countsByYear W627050902012 @default.
• W62705090 countsByYear W627050902015 @default.
• W62705090 countsByYear W627050902016 @default.
• W62705090 countsByYear W627050902021 @default.
• W62705090 crossrefType "journal-article" @default.
• W62705090 hasAuthorship W62705090A5057055046 @default.
• W62705090 hasConcept C111337013 @default.
• W62705090 hasConcept C113196181 @default.
• W62705090 hasConcept C121332964 @default.
• W62705090 hasConcept C152568617 @default.
• W62705090 hasConcept C159985019 @default.
• W62705090 hasConcept C160671074 @default.
• W62705090 hasConcept C185544564 @default.
• W62705090 hasConcept C185592680 @default.
• W62705090 hasConcept C18903297 @default.
• W62705090 hasConcept C191952053 @default.
• W62705090 hasConcept C192562407 @default.
• W62705090 hasConcept C22078206 @default.
• W62705090 hasConcept C2777855556 @default.
• W62705090 hasConcept C2777924906 @default.
• W62705090 hasConcept C43617362 @default.
• W62705090 hasConcept C49040817 @default.
• W62705090 hasConcept C544956773 @default.
• W62705090 hasConcept C57863236 @default.
• W62705090 hasConcept C86803240 @default.
• W62705090 hasConceptScore W62705090C111337013 @default.
• W62705090 hasConceptScore W62705090C113196181 @default.
• W62705090 hasConceptScore W62705090C121332964 @default.
• W62705090 hasConceptScore W62705090C152568617 @default.
• W62705090 hasConceptScore W62705090C159985019 @default.
• W62705090 hasConceptScore W62705090C160671074 @default.
• W62705090 hasConceptScore W62705090C185544564 @default.
• W62705090 hasConceptScore W62705090C185592680 @default.
• W62705090 hasConceptScore W62705090C18903297 @default.
• W62705090 hasConceptScore W62705090C191952053 @default.
• W62705090 hasConceptScore W62705090C192562407 @default.
• W62705090 hasConceptScore W62705090C22078206 @default.
• W62705090 hasConceptScore W62705090C2777855556 @default.
• W62705090 hasConceptScore W62705090C2777924906 @default.
• W62705090 hasConceptScore W62705090C43617362 @default.
• W62705090 hasConceptScore W62705090C49040817 @default.
• W62705090 hasConceptScore W62705090C544956773 @default.
• W62705090 hasConceptScore W62705090C57863236 @default.
• W62705090 hasConceptScore W62705090C86803240 @default.
• W62705090 hasLocation W627050901 @default.
• W62705090 hasOpenAccess W62705090 @default.
• W62705090 hasPrimaryLocation W627050901 @default.
• W62705090 hasRelatedWork W1963960687 @default.
• W62705090 hasRelatedWork W1966398545 @default.
• W62705090 hasRelatedWork W1966991654 @default.
• W62705090 hasRelatedWork W1971480567 @default.
• W62705090 hasRelatedWork W1977755437 @default.
• W62705090 hasRelatedWork W1979718755 @default.
• W62705090 hasRelatedWork W1981881019 @default.
• W62705090 hasRelatedWork W1984717732 @default.
• W62705090 hasRelatedWork W1999885636 @default.
• W62705090 hasRelatedWork W2029021579 @default.
• W62705090 hasRelatedWork W2035276934 @default.
• W62705090 hasRelatedWork W2042285139 @default.
• W62705090 hasRelatedWork W2045487092 @default.
• W62705090 hasRelatedWork W2060487072 @default.
• W62705090 hasRelatedWork W2067792919 @default.
• W62705090 hasRelatedWork W2083233849 @default.
• W62705090 hasRelatedWork W2103217468 @default.
• W62705090 hasRelatedWork W2125845903 @default.
• W62705090 hasRelatedWork W3014024838 @default.
• W62705090 hasRelatedWork W89523174 @default.
• W62705090 isParatext "false" @default.
• W62705090 isRetracted "false" @default.
• W62705090 magId "62705090" @default.
• W62705090 workType "article" @default.