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- W62915468 abstract "The effects of laser annealing n-type, (001) Si implanted with the p-type dopants Al, Ga and In at doses of 3×10 13 to 3×10 16 cm –2 have been determined using resistivity measurements, impurity profiling and transmission electron microscopy. Single and multiple laser pulses at energy densities of up to about 3Jcm –2 were employed and compared with furnace anneals. For low dose implants, electrical activation of dopants increased with the number of laser anneals at low energy densities. However, the opposite behaviour occurred at high energy densities, possibly due to dopant segregation to each sample surface. Such effects were especially prevalent for high dose implants since impurity cell formation occurred." @default.
- W62915468 created "2016-06-24" @default.
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- W62915468 date "1980-01-01" @default.
- W62915468 modified "2023-10-05" @default.
- W62915468 title "LASER AND THERMAL ANNEALING OF ION-IMPLANTED P-TYPE DOPANTS IN SILICON" @default.
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- W62915468 doi "https://doi.org/10.1016/b978-0-12-746850-1.50037-2" @default.
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