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- W62944905 abstract "This chapter discusses the basic principles of plasma etching for silicon devices. Low-pressure plasma discharges are in wide use for etching micrometer-size features in microelectronic integrated circuits and discrete devices. Plasma etching has largely replaced wet etching because of its finer line width resolution and adaptability to increased throughput and automation. Plasma etching techniques can be characterized according to rate, anisotropy, selectivity, the degree of loading effect, and texture. By convention, anisotropy in plasma etching refers to preferential erosion in a direction normal to the surface of a wafer. At a steady state, a chemically reacting system is characterized by the rates of elementary reactions, heat and mass transfer, and the boundary conditions. Despite of the seemingly large number of parameters, the state and product distribution of a chemical reactor can generally be characterized by a small number of dimensionless or similarity parameters, such as the Peclet number, Reynolds number, Damkohler number, and residence time. Electron–molecule reactions are responsible for ionization and dissociation in the plasma. Unlike neutrals and ions, which are close to translational equilibrium, electron energies are well above thermal equilibrium values." @default.
- W62944905 created "2016-06-24" @default.
- W62944905 creator A5051005803 @default.
- W62944905 creator A5065267496 @default.
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- W62944905 date "1984-01-01" @default.
- W62944905 modified "2023-09-26" @default.
- W62944905 title "Basic Principles of Plasma Etching for Silicon Devices" @default.
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