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• W634875556 abstract "Molecular beam epitaxy (MBE) is a method for growing semiconductor structures atom-layer by atom-layer. The growth rate is about one atomic layer per second. Very thin layers can thus be grown. Shutters in front of the effusion cells control the transition between layers of different composition. This allows growth of layers with different compositions on top of each other and thus different electrical properties. In this thesis growth calibrations and growths of multiple-quantum-well (MQW) GaInAsSb/AlGaAsSb mid-infrared lasers emitting at 2.0 µm and 2.3 µm are described. Photoluminescence and x-ray diffraction have been used to characterize the layers.Briefly, the main findings are:Reflection high-energy electron diffraction (RHEED) is frequently used to observe the oxide desoprtion from semiconductors substrates prior to growth. In this study it is shown that the oxide desorption from the GaSb substrates can be monitored using a mass spectrometer tuned to Ga2O (155.3 a.m.u.). A systematic study has been carried out in order to find out to which extent the growth conditions affect the arsenic incorporation into GaAsSb. Several homogenous GaAsSb layers have been grown under different growth conditions and characterized using x-ray diffraction. The samples were grown with an Sb:III flux ratio > 1. It was found that the arsenic incorporation into GaAsSb is strongly dependant upon the substrate temperature, As flux and the group III flux. The Sb flux also influences the As incorporation. The uniformity of the gallium and arsenic composition in GaAsy Sb1-y across a 2 inch wafer was measured. It was found that the gallium flux was lower at the edges of the wafer. The variation of the Ga flux across the wafer was ±1.1%. The As fraction did not vary systematically across the wafer. The variation across the 2 inch wafer was Δy = ±0.0032 for GaAs0.16Sb0.84. Al0.9Ga0.1AsySb1-y layers are used for the cladding layers in these mid-infrared lasers. Rocking curves and diffraction space amps of Al0.9Ga0.1AsySb1-y layers have been recorded and analysed. Rocking curves and diffraction space maps of Al0.9Ga0.1AsySb1-y layers closely lattice matched to the substrate at room temperature display a broadening of the epilayer diffraction peak. The broadening is interpreted as due to dislocations introduced due to the lattice mismatch at the growth temperature. It is clear that lattice-matching at the growth temperature is important in order to minimize the dislocation density and thereby achieve high quality cladding layers. Doping of the cladding layers is important in order to minimize the resistive heating and allow injection of carriers into the active region of the laser. Controlled p-type doping of AlGAAsSb was successfully performed with Be. The incorporation efficiency of Be into AlGaAsSb was found to be constant for the range of Be fluxes used. Doping up to 1.2•1019 cm-3 was achieved without any saturation. The n-type doping of AlGaAsSb has been calibrated by Te-doping of GaAa and GaSb. Electron carrier concentrations are sufficient for doping the cladding layers in Mid-IR diode lasers.The growth and characterization of mid-infrared GaInAsSb/AlGaAsSb multiple-quantum-well (MQW) lasers are described. Pulsed lasing at a wavelength of 2.0 µm was obtained at a temperature of 18o. Suggested improvements that can be performed in order to achieve better characteristics are listed. A laser partly based on these improvements has been grown and showed continuous wave lasing at room temperature with an emission wavelength of 2.3 µm.The effect of exposure of the interfaces between the barriers and the wells to antimony and arsenic + antimony fluxes during growth interruptions has been studied using photoluminescence and high-resolution x-ray diffraction. We found that a 300 s growth interruption in an antimony flux resulted in a flattening of the interfaces between the wells and the barriers. Comparison of x-ray rocking curves performed on samples exposed to an arsenic flux at the interfaces with x-ray rocking curve simulations shows that exposure to arsenic results in an arsenic for antimony exchange reaction. The arsenic containing layer at the interface is highly strained. The contrast in the lattice constant at the interface results in an increased number of superlattice satellite peaks in the rocking curves. A thorough study on the measurement of lattice constants using x-ray diffraction has been performed. Three methods are described and analysed. It is important to use reflections that are sensitive to errors in the input parameters. The input parameter with the largest uncertainty is the diffraction peak position. The 444 and the 553 reflections are much less sensitive to error in the input parameters than e.g. the 115 and 117 reflections." @default.
• W634875556 created "2016-06-24" @default.
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• W634875556 date "2004-01-01" @default.
• W634875556 modified "2023-09-27" @default.
• W634875556 title "Molecular beam epitaxial growth and characterization of GaInAsSb/AlGaAsSb mid-infrared laser structures" @default.
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