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- W643077079 abstract "This work presents an interesting observation that the suppression of crystallization for p-type Cu2O facilitates the transition of transport behaviors from variable-range-hopping (VRH) to Arrhenius-like mechanism and further lead to a great reduction of thermal activation energy. Raman spectroscopy analysis shows a distortion of symmetrical O–Cu–O crosslink structure in the amorphous Cu2O. The disruption of symmetry is revealed to increase dispersion of upper valence band and reduce Fermi as well, which results in possible intrusion of the Fermi level into a band tail state adjacent to the upper valence band level. Meanwhile, the amorphous Cu2O film shows an optical band gap of 2.7 eV, much larger than 2.0 eV for the crystalline counterparts. The blue shift is consistent with the variation of energy band structure with the film changing from crystalline to amorphous state, suggesting that the O-mediated d–d interaction can be weakened with the nonsymmetrical structure in amorphous phase." @default.
- W643077079 created "2016-06-24" @default.
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- W643077079 date "2015-10-01" @default.
- W643077079 modified "2023-10-02" @default.
- W643077079 title "The improvement of hole transport property and optical band gap for amorphous Cu2O films" @default.
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- W643077079 doi "https://doi.org/10.1016/j.jallcom.2015.06.147" @default.
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