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• W6489145 abstract "A metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) is proposed as an effective UV sensing device for integration with a GaN n-channel MISFET on auto-doped p-type GaN grown on a silicon substrate. Due to the high hole barrier of the metal-p-GaN contact, the dark current density of the fabricated MSM PD was less than <TEX>$3;nA/cm^2$</TEX> at a bias of up to 5 V. Meanwhile, the UV/visible rejection ratio was 400 and the cutoff wavelength of the spectral responsivity was 365 nm. However, the UV/visible ratio was limited by the sub-bandgap response, which was attributed to defectrelated deep traps in the p-GaN layer of the MSM PD. In conclusion, an MSM PD has a high process compatibility with the n-channel GaN Schottky barrier MISFET fabrication process and epitaxy on a silicon substrate." @default.
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• W6489145 date "2008-09-30" @default.
• W6489145 modified "2023-10-16" @default.
• W6489145 title "A highly integrable p-GaN MSM photodetector with GaN n-channel MISFET for UV image sensor system" @default.
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• W6489145 doi "https://doi.org/10.5369/jsst.2008.17.5.346" @default.
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