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Matches in SemOpenAlex for { <https://semopenalex.org/work/W652201326> ?p ?o ?g. }

• W652201326 endingPage "63" @default.
• W652201326 startingPage "60" @default.
• W652201326 abstract "Electronic packaging continues to move towards improved performance and lower cost. Requirements of higher performance, reduced size, weight and cost of both high density interconnects and high frequency devices have led to the search for new materials, material combinations, methods, processes and production equipment. Efficient technologies for producing high density interconnects, circuits for high frequency applications but also integrated packaging solutions for electrical and optical interconnects are looked for. Of emerging interest are methods and materials for ultra low cost printing of active components such as diodes and transistors. Large area panel processing (LAP) and sequential build-up technologies, using an UV-excimer projection lithography equipment and a photo-patternable ORMOCER® dielectric, is presented. The novel large area processing equipment enables 5 μm resolution patterning of surfaces up to a size of 610 mm x 610 mm. Large area panel processing enables miniaturized low cost & high performance electronics & photonics packaging. The advanced ORMOCER® dielectric and optical materials allow low temperature processing on low cost polymer substrates with low temperature stability such as FR4. Partitioning between cheap standard (lower) density interconnect in PCB substrates and high density interconnect in the upper thin film layers is possible in order to reduce the number of metal layers and arrive at an optimal performance cost ratio for specific applications. A demonstrator composed of four sequentially build-up dielectric layers have been deposited on a low cost FR4 epoxy substrate intended for high frequency applications. The dielectric layers consist of a photo-patternable ORMOCER® and the intermediate metal layers of sputtered Cu. The UV-patterning was performed with the LAP projection lithography equipment. The produced microstrip lines, ring resonators, vias, stacked capacitors and filters have been characterized at frequencies from 1 GHz to 40 GHz showing the potential of the new dielectric material for microwave applications. The investigation of the material properties were performed with a network analyzer where specially designed structures had been made for the characterization. Some of the measurements at high frequencies were also evaluated and compared with simulations. The measured results showed good agreement with the simulated response. The experimentally obtained high frequency properties of er ≈ 3.05 and tan(δ) ≈ 0.024 at 10 GHz - 40 GHz would be sufficient for many applications. The dielectric properties of an electronics grade silicone elastomer have been investigated in the frequency intervals 0.1 Hz to 1 MHz and 7 GHz to 18 GHz. The low frequency measurements were performed with a dielectric spectrometer. The results are discussed in terms of performance and usefulness of the material in electronic packaging. The permittivity at room temperature in the frequency range 7 GHz - 18 GHz varied between 2.75 to 2.8 and the loss tangent between 0.018 to 0.033. The loss tangent in the GHz region at room temperature was considerably higher than in the Hz – MHz region most probably due to the activation of the inherent alpha relaxation in the material when reaching the GHz-range. A stepped impedance filter has been realized by changing the dielectric material, i.e. the permittivity instead of modifying the line width. It has been shown that the technology can offer alternatives to the standard approach and also that it is feasible to arrive at a denser packaging by combining low and high permittivity materials. The practical limit of the permittivity ratio is dependent on both available materials and on processability of these materials. The useful range of impedance ratios can be further increased by simultaneously using the ‘standard stepped impedance approach’ and the ‘variable dielectric approach’. A novel rectifying device has been realized by screen printing a silicon powder composite with the intention to use a low temperature low cost manufacturing method. Rectification at frequencies up to 1 MHz has been demonstrated but so far with a too high series resistance to be practically useful. With optimization of the device and composite concept, low temperature, ultra-low cost high speed printing of e.g. high frequency diodes on any substrate, may be viable." @default.
• W652201326 created "2016-06-24" @default.
• W652201326 creator A5002592585 @default.
• W652201326 creator A5006443757 @default.
• W652201326 creator A5027975672 @default.
• W652201326 creator A5035454855 @default.
• W652201326 creator A5071758363 @default.
• W652201326 creator A5087915548 @default.
• W652201326 creator A5091867242 @default.
• W652201326 date "2002-01-01" @default.
• W652201326 modified "2023-09-27" @default.
• W652201326 title "Microwave circuits in multilayer ORMOCER® thin film" @default.
• W652201326 hasPublicationYear "2002" @default.
• W652201326 type Work @default.
• W652201326 sameAs 652201326 @default.
• W652201326 citedByCount "0" @default.
• W652201326 crossrefType "journal-article" @default.
• W652201326 hasAuthorship W652201326A5002592585 @default.
• W652201326 hasAuthorship W652201326A5006443757 @default.
• W652201326 hasAuthorship W652201326A5027975672 @default.
• W652201326 hasAuthorship W652201326A5035454855 @default.
• W652201326 hasAuthorship W652201326A5071758363 @default.
• W652201326 hasAuthorship W652201326A5087915548 @default.
• W652201326 hasAuthorship W652201326A5091867242 @default.
• W652201326 hasConcept C100460472 @default.
• W652201326 hasConcept C111368507 @default.
• W652201326 hasConcept C119599485 @default.
• W652201326 hasConcept C120793396 @default.
• W652201326 hasConcept C123745756 @default.
• W652201326 hasConcept C127313418 @default.
• W652201326 hasConcept C127413603 @default.
• W652201326 hasConcept C133386390 @default.
• W652201326 hasConcept C134146338 @default.
• W652201326 hasConcept C138331895 @default.
• W652201326 hasConcept C158802814 @default.
• W652201326 hasConcept C165801399 @default.
• W652201326 hasConcept C171250308 @default.
• W652201326 hasConcept C172385210 @default.
• W652201326 hasConcept C192562407 @default.
• W652201326 hasConcept C204223013 @default.
• W652201326 hasConcept C2777289219 @default.
• W652201326 hasConcept C2779227376 @default.
• W652201326 hasConcept C41008148 @default.
• W652201326 hasConcept C49040817 @default.
• W652201326 hasConcept C530198007 @default.
• W652201326 hasConcept C76155785 @default.
• W652201326 hasConceptScore W652201326C100460472 @default.
• W652201326 hasConceptScore W652201326C111368507 @default.
• W652201326 hasConceptScore W652201326C119599485 @default.
• W652201326 hasConceptScore W652201326C120793396 @default.
• W652201326 hasConceptScore W652201326C123745756 @default.
• W652201326 hasConceptScore W652201326C127313418 @default.
• W652201326 hasConceptScore W652201326C127413603 @default.
• W652201326 hasConceptScore W652201326C133386390 @default.
• W652201326 hasConceptScore W652201326C134146338 @default.
• W652201326 hasConceptScore W652201326C138331895 @default.
• W652201326 hasConceptScore W652201326C158802814 @default.
• W652201326 hasConceptScore W652201326C165801399 @default.
• W652201326 hasConceptScore W652201326C171250308 @default.
• W652201326 hasConceptScore W652201326C172385210 @default.
• W652201326 hasConceptScore W652201326C192562407 @default.
• W652201326 hasConceptScore W652201326C204223013 @default.
• W652201326 hasConceptScore W652201326C2777289219 @default.
• W652201326 hasConceptScore W652201326C2779227376 @default.
• W652201326 hasConceptScore W652201326C41008148 @default.
• W652201326 hasConceptScore W652201326C49040817 @default.
• W652201326 hasConceptScore W652201326C530198007 @default.
• W652201326 hasConceptScore W652201326C76155785 @default.
• W652201326 hasLocation W6522013261 @default.
• W652201326 hasOpenAccess W652201326 @default.
• W652201326 hasPrimaryLocation W6522013261 @default.
• W652201326 hasRelatedWork W1972473695 @default.
• W652201326 hasRelatedWork W2086028649 @default.
• W652201326 hasRelatedWork W2093157247 @default.
• W652201326 hasRelatedWork W2101967584 @default.
• W652201326 hasRelatedWork W2102812748 @default.
• W652201326 hasRelatedWork W2118122590 @default.
• W652201326 hasRelatedWork W2126761148 @default.
• W652201326 hasRelatedWork W2140521569 @default.
• W652201326 hasRelatedWork W2170939637 @default.
• W652201326 hasRelatedWork W2428366285 @default.
• W652201326 hasRelatedWork W253172735 @default.
• W652201326 hasRelatedWork W2803352409 @default.
• W652201326 hasRelatedWork W2990926360 @default.
• W652201326 hasRelatedWork W3080963152 @default.
• W652201326 hasRelatedWork W3118286779 @default.
• W652201326 hasRelatedWork W3138455158 @default.
• W652201326 hasRelatedWork W3152586335 @default.
• W652201326 hasRelatedWork W1858546705 @default.
• W652201326 hasRelatedWork W2187947783 @default.
• W652201326 hasRelatedWork W2876655555 @default.
• W652201326 isParatext "false" @default.
• W652201326 isRetracted "false" @default.
• W652201326 magId "652201326" @default.
• W652201326 workType "article" @default.