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- W659483276 abstract "Ge10Sb67.5Te22.5 thin films were prepared by RF magnetron sputtering from a single high purity Ge10Sb67.5Te22.5 target under the following condition: RF power: 30 W, Ar pressure: 1.067 Pa, Ar flow: 9 ccm, substrate temperature: room temperature (water cooling), distance between target and substrate: 7 cm, and sputtering time: 10∼40 min. Although the as-deposited film was amorphous, annealing for 30 min at 573 K allowed it to be crystallized. The crystallization temperature and the activation energy of Ge10Sb67.5Te22.5 thin film were around 463 K and 2.50 eV, respectively, while those of Ge2Sb2Te5 thin film, prepared under the same conditions as stated above, were around 408 K and 2.04 eV, respectively. The difference of optical constants between crystalline and amorphous phases of Ge10Sb67.5Te22.5 and Ge2Sb2Te5 thin films were −0.9+i 0.93 and −0.77+i 0.67, respectively, in a blue laser area, i.e., wavelength 405 nm." @default.
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- W659483276 date "2004-01-01" @default.
- W659483276 modified "2023-09-27" @default.
- W659483276 title "Preparation and Characterization of a New Ge-Sb-Te Thin Film" @default.
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- W659483276 doi "https://doi.org/10.2320/jinstmet.68.90" @default.
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