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- W66569699 abstract "Publisher SummaryThis chapter provides an overview of the theoretical-computational methods and the latest achievements for atomistic simulation of epitaxial growth processes of semiconductors such as GaAs based on quantum mechanics. It briefly reviews various computational methods such as pseudopotential methods and empirical interatomic potentials and demonstrates molecular dynamics and Monte Carlo methods as computational methods at finite temperatures. Applicability of these methods to epitaxial growth processes is exemplified by adatom migration on a GaAs(001) surface. The chapter presents a quantum mechanical approach for understanding surface reconstructions of GaAs(001) and elemental growth processes on the surface such as migration potentials, adsorption, and desorption behavior. A simple energy formalism and newly developed electron counting Monte Carlo simulation are introduced, which are used to investigate migration potentials and initial growth processes on various GaAs surfaces. These approaches provide good estimates of the migration potentials of Ga adatoms on the surfaces with various orientations and undulations such as steps or As-dimer kinks. Finally, future prospects in computational materials science for semiconductors are discussed by introducing a recent achievement to epitaxial growth." @default.
- W66569699 created "2016-06-24" @default.
- W66569699 creator A5029796688 @default.
- W66569699 date "2001-01-01" @default.
- W66569699 modified "2023-09-24" @default.
- W66569699 title "Atomistic simulation of epitaxial growth processes" @default.
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