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- W66743074 abstract "Ga 2 O 3 (Gd 2 O 3 ) was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal–oxide–semiconductor field-effect transistor (MOSFET). Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal–semiconductor field-effect transistor fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 °C. Modeling of the effect of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device." @default.
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- W66743074 date "1998-12-28" @default.
- W66743074 modified "2023-10-15" @default.
- W66743074 title "Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors" @default.
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- W66743074 doi "https://doi.org/10.1063/1.122927" @default.
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