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- W66966955 abstract "SUMMARY The thermionic emission is one of the main conduction mechanisms in heterojunctions. In order to perform realistic numerical simulation of III-V devices a model of thermionic emission at the interface between two semiconductors is proposed. This model, derived from the thermionic emission-diffusion theory, is applied to some typical heterostructures such as those encountered in optoelectronic components. INTRODUCTION Many of today III-V components are heterostructures such as laser diodes, photodiodes, high electron mobility transistors, bipolar heterojunction transistors {Milnes 1986). Specific simulation problems are encountered when dealing with the description of heterojunctions. For instance Fermi-Dirac statistics description of free carriers must be used in most of the above devices owing to the notchs and spikes appearing at heterointerfaces (Viallet, Mottet I985). Simulation of the conduction through heterojunction is an other problem which must be dealt with. The well known drift-diffusion model, which is extensively used to describe the conduction in semiconductor devices, is scarcely adequate to take into account the effective conduction mode at the heterojunction. Among the possible conduction mechanisms, thermionic and tunnel emissions are the most often encountered mechanisms at heterojunctions" @default.
- W66966955 created "2016-06-24" @default.
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- W66966955 date "1988-01-01" @default.
- W66966955 modified "2023-09-27" @default.
- W66966955 title "THERMIONIC EMISSION IN HETEROJUNCTIONS" @default.
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