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- W69080736 abstract "In this paper, we present a simple yet effective surface treatment technique using a UV-enhanced electrode-less wetetching to reduce roughness as well as surface leakage paths in ICP-etched III-N devices. The surface treatment in this study utilizes an aqueous solution with potassium hydroxide (KOH) as the etchant, catalyzed with a UV-light illumination. To study optimal conditions of the surface treatment, bi-level design of experiments were studied and an optimal etching conduction was found to achieve a reduction of the leakage current in III-N p-n junctions by at least one order of magnitude. To develop a suitable fabrication processing for III-N PN junction, in this study, we used an ICP dry etching for p- and nlayer mesa etching. The n-type surface is then treated in a UVassisted wet etching treatment to remove only a few mono-layers of III-N surface atoms and to improve leakage current characteristics. In contrast to conventional PEC etching, we used the potassium persulphate (K2S2O8) as the oxidant to lift the need for electrodes in the UV-assisted surface treatment step. To achieve a smooth surface morphology with reduced high-filed leakage current, a set of design of experiments was conducted by studying the correlation between UV illumination power, KOH concentration, and the K2S2O8 concentration. The results showed that, through this new surface treatment technique, we were able to achieve an improvement of surface morphology by > 75% and at least 10-times lower leakage current on GaN PIN diodes. The electrode-less UV-enhanced surface technique may provide a simple yet effective way to fabricate low-leakage III-N devices." @default.
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- W69080736 date "2008-01-01" @default.
- W69080736 modified "2023-09-27" @default.
- W69080736 title "A Surface Treatment Technique for III-N Device Fabrication" @default.
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