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• W69853865 abstract "Summary The application of the selective oxidation [l] to the fabrication of vertical-cavity surfaceemitting lasers (VCSELs) [2] has resulted in remarkable performance improvements including ultralow threshold current and high power conversion efficiency [2-41. This technique also possesses advantages for extending the VCSEL to 2-dimensional arrays. When used with postgrowth deposited distributed Bragg reflectors (DBFb) the Alxq can provide a surface insulator on which to lay metal connections. In addition, the 3-dimensional optical confinement allows a novel means of controlling the lasing wavelength, since the quasi-mode eigenfrequency is established by the lateral optical boundary conditions as well as the vertical-cavity resonance. In this talk we describe recent results in achieving lasing wavelength control in selectively oxidized VCSEL arrays, as well as reduction in lasing threshold. To demonstrate the wavelength control, Fig. 1 shows a scanning electron microscope of a 2x2 array in whch the lateral sizes of the individual VCSELs are varied in 0.5pm steps from 3.0pm to 1.5pm. The lateral cavity dimensions are set by the sizes of GaAs mesas (750A thickness) that serve as oxidation masks. Since the AlGaAs layer to be oxidized is very close to the crystal surface, good control of the uniformity between device elements is achieved, as shown in Fig. 1. Figure 2 shows the lasing spectra from a similar 2x2 array from the same processed wafer, but with slightly larger active regions. Measured lasing wavelengths for a 2x2 array containing device sizes of 2.0, 2.5, 3.0, and 3.5pm are 9574,9587,9598, and respectively. The measured threshold currents for the 2.0,2.5,3.0, and 3.5pm sized devices are 169, 187,214, and 240pA, respectively. The threshold current of the oxide VCSEL can be reduced further through reducing intracavity losses associated with the p-type doping and the DBRs. We have recently reduced the threshold current to less than 40pA continuous wave at room temperature. Figure 3 shows a schematic illustration of the cavity design, which allows for removal of a heavily p-doped contract layer from the optical path of the vertical-cavity, and the incorporation of a low loss seven pair MgF/ZnSe upper DBR. Figure 4 shows the light versus current curve of a 3pm sized VCSEL that exhibits 38pA threshold current. While the slope efficiency is only 7% for this device, comparison with larger devices suggest that the lower twenty-six pair AlAs/GaAs DBR is the limitation for both threshold and slope efficiency, making further improvements in both threshold and efficiency possible." @default.
• W69853865 created "2016-06-24" @default.
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• W69853865 date "1995-01-01" @default.
• W69853865 modified "2023-09-27" @default.
• W69853865 title "Low Threshold AlxOy-Confined VCSELs and Densely-Packed Arrays" @default.
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