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- W72409449 abstract "This work reports on the development of a new economically attractive a-Si process with high efficiency on LPCVD ZnO. It comprises an amorphous p-layer and a modified single chamber process for improved interfaces. A 1cm 2 a-Si record cell with 11.0% initial efficiency was obtained at about four times reduced process time for the p-layer deposition compared to the commonly used µc-Si/a-Si double p-layer. The high FF and Voc together with a low series resistance demonstrate the excellent quality of the LPCVD ZnO/a-Si p contact. The new a-Si process was successfully up-scaled to 1.4 m 2 modules yielding 10.3% initial active area efficiency for a a-Si module and 11.1% initial active area efficiency for a a-Si/µc-Si module." @default.
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- W72409449 date "2009-11-18" @default.
- W72409449 modified "2023-10-03" @default.
- W72409449 title "Up-Scaling of High Throughput a-Si Solar Cell Design on ZnO to 1.4m2 Modules" @default.
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- W72409449 doi "https://doi.org/10.4229/24theupvsec2009-3av.2.47" @default.
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