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- W72541618 abstract "Polycrystalline gallium arsenide films deposited on tungsten/graphite substrates have been used for the fabrication of thin film solar cells. Gallium arsenide films deposited on foreign substrates of 10 ..mu..m or less thickness exhibit, in most cases, pronounced shunting effects due to grain boundaries. MOS solar cells of 9 cm/sup 2/ area with an AMI efficiency of 8.5% and p/sup +//n/n/sup +/ homojunction solar cells of 1 cm/sup 2/ area with an AM1 efficiency of 8.8% have been prepared. However, in order to further improve the conversion efficiency before the development of effective passivation techniques, gallium arsenide films with large and uniform grain structure are necessary. The large grain gallium arsenide films have been prepared by using the arsine treatment of a thin layer of molten gallium on the substrate surface and the recrystallized germanium films on tungsten/graphite as substrates." @default.
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- W72541618 date "1984-05-01" @default.
- W72541618 modified "2023-09-28" @default.
- W72541618 title "Large grain gallium arsenide thin films" @default.
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