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- W73018933 abstract "Magnetic tunnel junctions have been fabricated by magnetron sputtering and patterned by deep ultraviolet photolithography. The tunnel magnetoresistance (TMR) was 15%-22% and resistance times area product (RxA) 7-22 Qjjrn2 for junctions having 4.75-5.5 Â thick A1 layer oxidized naturally. Two types of breakdown were observed: abrupt dielectric breakdown at effective field 10 MV/cm determined by the thickness of tunnel barrier, and a gradual breakdown related to defects in the tunnel barrier. After the breakdown a metallic pinhole is created, the size of which depends on the maximum current applied to the junction. The current flowing through the pinhole creates a strong circular magnetic field that curls local magnetization in the free layer around the pinhole. The subsequent free layer reversal is very sensitive to the pinhole location. The electric properties after breakdown can be well described by an Ohmic resistor and a tunnel magneto resistor connected in parallel." @default.
- W73018933 created "2016-06-24" @default.
- W73018933 creator A5042921463 @default.
- W73018933 date "2018-08-13" @default.
- W73018933 modified "2023-09-27" @default.
- W73018933 title "Ultra-thin alumina barrier magnetic tunnel junctions" @default.
- W73018933 cites W2155838631 @default.
- W73018933 doi "https://doi.org/10.31274/rtd-180813-12888" @default.
- W73018933 hasPublicationYear "2018" @default.
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