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- W747086475 abstract "提出了一种新型4H—SiC阳极凹槽D-RESURF肖特基二极管结构。阳极凹槽使器件反偏时横向电场增强，加快漂移区耗尽。同时，利用D-RESURF技术，提高器件击穿电压和正向导通特性；利用二维数值模拟，从耐压的角度，对降场层的厚度、浓度和长度进行优化。结果表明，新结构较之常规单RESURF结构，击穿电压从890V提高到1672V，导通电流为80mA／mm时，压降从4．4V降低到2．8V。" @default.
- W747086475 created "2016-06-24" @default.
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- W747086475 date "2008-01-01" @default.
- W747086475 modified "2023-09-24" @default.
- W747086475 title "新型4H—SiC阳极凹槽D—RESURF肖特基二极管研究" @default.
- W747086475 hasPublicationYear "2008" @default.
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