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- W747121932 abstract "High quality diamond films of the silicon on diamond (SOD) structure are deposited using CO and gas mixture in microwave plasma chemical vapor deposition (CVD), a SOD structure is fabricated using low pressure CVD polysilicon on diamond/ Si(100) substrate. The crystalline structure of the diamond films which composed of { 111} and {100} planes. were changed from octahedral one to cubo-octahedron one as the CO/ ratios are increased. The high quality diamond films without amorphous carbon and non-diamond elements were deposited at the CO/ flow rate of 0.18. and the main phase of the diamond films shows (111) plane. The diamond/Si(lOO) structure shows that the interface is flat without voids. The measured dielectric constant. leakage current and breakdown field were and respectively." @default.
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- W747121932 date "1998-01-01" @default.
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- W747121932 title "Formation of the Diamond Thin Film as the SOD Sturcture" @default.
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