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- W753375110 abstract "A thick n-type GaAs layer with Si doping density of and a thick undoped single crystalline AlAs layer were subsequently grown by molecular beam epitaxy on the GaAs substrate. The AlAs/GaAs layer was oxidized in bubbled vapor() ambient at for 2 and 3 hours. From the result of XPS analysis, small amounts of , AlAs, and elemental As were found in the samples oxidized up to 2 hours. After 3 hours oxidation, however, various oxides related to As were dissolved and As atoms were diffused out toward the oxide surface. The as-grown AlAs/GaAs layer was selectively converted to at the oxidation temperature for 3 hours. The oxidation temperature and time is very critical to stop the oxidation at the AlAs/GaAs interface and to form a defect-free surface layer." @default.
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- W753375110 date "1996-01-01" @default.
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- W753375110 title "Selective Oxidation of Single Crystalline AlAs layer on GaAs substrate and XPS(X-ray photoelectron spectroscopy) Analysis" @default.
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