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- W756344852 abstract "Silicon epitaxial films of submicron level were successfully grown by the RTCVD method. For the growth of silicon epitaxial layers, gas mixtures and various process parameters including prebake process were used. The growth conditions were varied to investigate their effects on the interface abruptness of doping profile, the film growth rates and crystalline properties. The crystallinity of the undoped silicon was excellent at the growth temperature of . The doping profiles were measured by SIMS technique. The abruptness of doping profile would be controlled within about in the structure of undoped Si / substrate." @default.
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- W756344852 date "1996-01-01" @default.
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- W756344852 title "Characteristics of the Silicon Epitaxial Films Grown by RTCVD Method" @default.
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