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- W75643627 abstract "Terminal measurements are made to verify that latching varies with gate drive resistance and occurs during turn off. dv/dt is varied from 1600 to 300 V/us with no impact on latch. A time-displaced turn-off current pulse demonstrates that latching occurs at very low drain voltages, suggesting a tailored gate drive. A brief discussion of device structure explains the observations." @default.
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- W75643627 date "1986-06-01" @default.
- W75643627 modified "2023-09-25" @default.
- W75643627 title "Circuit influences on COMFET™ (IGT) dynamic latching current" @default.
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- W75643627 doi "https://doi.org/10.1109/pesc.1986.7415548" @default.
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