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• W75661983 abstract "We characterized thin Al2O3 dielectrics with TiN electrodes in a three-dimensional, high-aspect-ratio, metal–insulator–metal capacitor structure. Transmission electron microscopy images did not reveal any interfacial layer(s) or intermixing of the films. This was confirmed by series capacitance analysis. Extensive electrical characterization indicated a well-behaved dielectric response. Time and frequency domain measurements did not show any significant dielectric relaxation. Charge transport was controlled by a direct tunneling mechanism in the field range of 1.5 to 6 MV/cm for a 50 Å film. The Fowler–Nordheim tunneling mechanism dominated the high field range (&gt;6 MV/cm for a 50 Å film), and the leakage currents became independent of dielectric thickness. The electron tunneling effective mass was found to be 0.2 me." @default.
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• W75661983 date "2003-11-18" @default.
• W75661983 modified "2023-09-24" @default.
• W75661983 title "Leakage mechanisms and dielectric properties of Al2O3/TiN-based metal-insulator-metal capacitors" @default.
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• W75661983 doi "https://doi.org/10.1063/1.1629373" @default.
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