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- W760084485 abstract "The compounds of system is suitable for use as the ferroelectric gate field effect transistor, because of their low relative permittivity, low coercive field and high heat resistance. In this study, ferroelectric (SNTO) thin films were prepared by chemical solution deposition processes. Sol-gel or MOD derived stock solutions were spin-coated onto either Pt/Ti//Si(100) or Pt//Si(100) substrate. After multiple coating/baking steps, dried thin films were annealed for crystallization at 800~1050 in oxygen. XRD and SEM analyses revealed that the crystallization temperature by sol-gel process can be lowered to 950 which is at least 50 lower than that by MOD process, it Pt/Ti//Si(100) substrate was used. The use of Pt//Si(100) substrate further lowered it to 850. Leakage current and relative permittivity () values were about , and 34, respectively. Polarization hysteresis loops were not saturated regardless of solution preparation methods and annealing temperatures. Remanent polarization () and coercive field() values were 0.7~1.9, and 15~22 kV/cm, respectively, when 5V pulse was applied." @default.
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- W760084485 date "1999-01-01" @default.
- W760084485 modified "2023-09-23" @default.
- W760084485 title "Crystallization and Ferroelectric Properties of $Sr_2(Nb, Ta)_2O_7$ Thin Films Prepared by Chemical Solution Deposition Processes" @default.
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