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- W76167382 abstract "Al/AlN/n-type 6H-SiC (0001) MIS structures were prepared by AlN layers on vicinal 6H-SiC(0001) substrates with reactive RF magnetron sputtering method. The AlN films were annealed at <TEX>$900^{circ}C$</TEX>, <TEX>$N_2$</TEX> atmosphere lot 1 minutes showed the best result. With XRD analysis, AlN(0002) peak was clearly found. The typical dielectric constant value of the AlN film in the MIS capacitors was obtained as 8.4 from photo C-V. Also, the gate leakage current density of the MlS capacitor was <TEX>$10^{-10};A/cm^2$</TEX> order within the electric field of 1.8 MV/cm. Finally, the amount of interface trap densities, <TEX>$D_{it}$</TEX>, was evaluated as <TEX>$5.3times10^{10};eV^{-1}cm^{-2}$</TEX> at (Ec-0.85) eV." @default.
- W76167382 created "2016-06-24" @default.
- W76167382 date "2005-11-01" @default.
- W76167382 modified "2023-10-14" @default.
- W76167382 title "Fabrication and Properties of AIN/SiC Structures using Reactive RF Magnetron Sputtering Method" @default.
- W76167382 cites W2158475157 @default.
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- W76167382 doi "https://doi.org/10.4313/jkem.2005.18.11.977" @default.
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