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• W762400032 abstract "Electroluminescent ZnS:Mn thin films have been deposited by Zn, S and Mn ions from high-density, high-temperature plasma produced by an intense (< GW/cm2), pulsed (~ tens of ns), ion beam onto the ZnS:Mn target. X-ray diffraction analysis shows the ZnS films have a polycrystalline, hexagonal structure. Deposition rate is typically ~ 0.3 μm per beam shot. Using a simple model, the instantaneous deposition rate is estimated to be ~ 2 cm/s, which exceeds five orders of magnitude higher than those of conventional deposition method. The electroluminescent device exhibits the maximum brightness of 195 cd/m2 under a 10 kHz sinusoidal excitation at 102 V (rms)." @default.
• W762400032 created "2016-06-24" @default.
• W762400032 creator A5076561291 @default.
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• W762400032 date "1989-01-01" @default.
• W762400032 modified "2023-09-23" @default.
• W762400032 title "AC Thin-Film ZnS:Mn Electroluminescent Device Prepared by Intense Pulsed Ion Beam Evaporation" @default.
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• W762400032 doi "https://doi.org/10.1007/978-3-642-93430-8_49" @default.
• W762400032 hasPublicationYear "1989" @default.
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