Matches in SemOpenAlex for { <https://semopenalex.org/work/W764680295> ?p ?o ?g. }
Showing items 1 to 60 of
60
with 100 items per page.
- W764680295 abstract "This thesis focuses on epitaxial growth of Si and SiGe at low temperature (200°C) by Plasma Enhanced Chemical Vapor Deposition (PECVD), and its application in thin film crystalline solar cells. Our goal is to gain insight into this unusual growth process, as well as to investigate the potential of such low temperaturedeposited material for single and multi-junction solar cells.First, we have proposed a one pump-down plasma process to clean out-of-the-box c-Si wafer surface and grow epitaxial layers of up to 8µm thick, without ultra-high vacuum, in a standard RF-PECVD reactor. By exploring the experimental parameters space, the link between layer quality and important physical variables, such as silane dilution, ion energy, or deposition pressure, has been confirmed. Both material and electrical properties were analyzed, and we found that epitaxial quality improves with film thickness. Furthermore, we could bring evidence of SiGe and Ge epitaxial growth under similar conditions. Then, with the whole process steps <200°C, we have achieved PIN heterojunction solar cells on highly doped substrates with 1-4µm epitaxial absorber, reaching 8.8% efficiency (without light trapping) and 80.5% FF. Replacing Si absorber by epitaxial Si0:73Ge0:27 resulted in 11% boost in Jsc. The use of an engineered wafer/epitaxial layer interface and stress enables easy lift-off: e.g. we successfully bonded 1.5µm thick 10cm^2 epi-Si to glass. Additionally, we have considered the impact of photonic nanostructures on device properties. Together, the control of growth, transfer and advanced light trapping are paving the way toward highly efficient, ultrathin (<10µm) and low cost c-Si cells. Finally, in contrast with general trend of growing III-V semiconductors on Si, we have studied the hetero-epitaxial growth of Si on III-V. Good crystal quality was achieved by direct Si deposition on GaAs, thanks to reduced thermal load and suppressed polarity issues in this approach. Using MOCVD, we could build GaAs cells with 20% efficiency and III-V tunnel junctions reaching 55A/cm^2. Tunneling improvement upon H-plasma exposure was shown. Those results, combined with III-V layer lift-off, validate milestones toward high efficiency tandem AlGaAs(MOVD)/SiGe(PECVD) metamorphic solar cells." @default.
- W764680295 created "2016-06-24" @default.
- W764680295 creator A5066071242 @default.
- W764680295 date "2014-12-11" @default.
- W764680295 modified "2023-10-02" @default.
- W764680295 title "Epitaxial growth of Si(Ge) materials on Si and GaAs by low temperature PECVD: towards tandem devices" @default.
- W764680295 hasPublicationYear "2014" @default.
- W764680295 type Work @default.
- W764680295 sameAs 764680295 @default.
- W764680295 citedByCount "1" @default.
- W764680295 countsByYear W7646802952017 @default.
- W764680295 crossrefType "dissertation" @default.
- W764680295 hasAuthorship W764680295A5066071242 @default.
- W764680295 hasConcept C110738630 @default.
- W764680295 hasConcept C160671074 @default.
- W764680295 hasConcept C171250308 @default.
- W764680295 hasConcept C192562407 @default.
- W764680295 hasConcept C2779227376 @default.
- W764680295 hasConcept C2780824857 @default.
- W764680295 hasConcept C38347018 @default.
- W764680295 hasConcept C49040817 @default.
- W764680295 hasConcept C57410435 @default.
- W764680295 hasConcept C79794668 @default.
- W764680295 hasConceptScore W764680295C110738630 @default.
- W764680295 hasConceptScore W764680295C160671074 @default.
- W764680295 hasConceptScore W764680295C171250308 @default.
- W764680295 hasConceptScore W764680295C192562407 @default.
- W764680295 hasConceptScore W764680295C2779227376 @default.
- W764680295 hasConceptScore W764680295C2780824857 @default.
- W764680295 hasConceptScore W764680295C38347018 @default.
- W764680295 hasConceptScore W764680295C49040817 @default.
- W764680295 hasConceptScore W764680295C57410435 @default.
- W764680295 hasConceptScore W764680295C79794668 @default.
- W764680295 hasLocation W7646802951 @default.
- W764680295 hasOpenAccess W764680295 @default.
- W764680295 hasPrimaryLocation W7646802951 @default.
- W764680295 hasRelatedWork W1498483775 @default.
- W764680295 hasRelatedWork W1978198289 @default.
- W764680295 hasRelatedWork W2022889058 @default.
- W764680295 hasRelatedWork W2028078365 @default.
- W764680295 hasRelatedWork W2048122998 @default.
- W764680295 hasRelatedWork W2048143992 @default.
- W764680295 hasRelatedWork W2051995152 @default.
- W764680295 hasRelatedWork W2086908493 @default.
- W764680295 hasRelatedWork W2122913881 @default.
- W764680295 hasRelatedWork W2127927983 @default.
- W764680295 hasRelatedWork W2164982052 @default.
- W764680295 hasRelatedWork W2168832008 @default.
- W764680295 hasRelatedWork W2181056387 @default.
- W764680295 hasRelatedWork W2205674077 @default.
- W764680295 hasRelatedWork W2262820227 @default.
- W764680295 hasRelatedWork W2559166077 @default.
- W764680295 hasRelatedWork W2738617439 @default.
- W764680295 hasRelatedWork W2761384602 @default.
- W764680295 hasRelatedWork W2902537401 @default.
- W764680295 hasRelatedWork W3173257031 @default.
- W764680295 isParatext "false" @default.
- W764680295 isRetracted "false" @default.
- W764680295 magId "764680295" @default.
- W764680295 workType "dissertation" @default.