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- W766863904 abstract "<TEX>$Al_2O_3$</TEX> thin films were grown on H-terminated Si(001) substrates using dimethylaluminum isopropoxide [DMAl: <TEX>$(CH_3)_2AlOCH(CH_3)_2$</TEX>], as a new Al precursor, and water by atomic layer deposition (ALD). The selflimiting ALD process by alternate surface reactions of DMAI and <TEX>$H_2O$</TEX> was confirmed from measured thicknesses of the aluminum oxide films as functions of the DMAI pulse time and the number of DMAI-<TEX>$H_2O$</TEX> cycles. Under optimal reaction conditions, a growth rate of ~1.06 <TEX>${AA}$</TEX> per ALD cycle was achieved at the substrate temperature of <TEX>$150;^{circ}C$</TEX>. From a mass spectrometric study of the DMAI-<TEX>$D_2O$</TEX> ALD process, it was determined that the overall binary reaction for the deposition of <TEX>$Al_2O_3;[2;(CH_3)_2AlOCH(CH_3)_2;+;3;H_2O;{rightarrow};Al_2O_3;+;4;CH_4;+;2;HOCH(CH_3)_2]$</TEX>can be separated into the following two half-reactions: where the asterisks designate the surface species. Growth of stoichiometric <TEX>$Al_2O_3$</TEX> thin films with carbon incorporation less than 1.5 atomic % was confirmed by depth profiling Auger electron spectroscopy. Atomic force microscopy images show atomically flat and uniform surfaces. X-ray photoelectron spectroscopy and cross-sectional high resolution transmission electron microscopy of an <TEX>$Al_2O_3$</TEX> film indicate that there is no distinguishable interfacial Si oxide layer except that a very thin layer of aluminum silicate may have been formed between the <TEX>$Al_2O_3$</TEX> film and the Si substrate. C-V measurements of an <TEX>$Al_2O_3$</TEX> film showed capacitance values comparable to previously reported values." @default.
- W766863904 created "2016-06-24" @default.
- W766863904 date "2003-11-20" @default.
- W766863904 modified "2023-10-05" @default.
- W766863904 title "Preparation of Al<sub>2</sub>O<sub>3</sub>Thin Films by Atomic Layer Deposition Using Dimethylaluminum Isopropoxide and Water and Their Reaction Mechanisms" @default.
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- W766863904 doi "https://doi.org/10.5012/bkcs.2003.24.11.1659" @default.
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