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- W7682114 abstract "An example to demonstrate excellent resolution in in-lens SE and high-angle BSE imaging at low accelerating voltages of below 2.0 kV is presented. The sample selected is an Al foil for capacitor application which had been heattreated to give a high cubic texture with the surface of the foil occupied mostly, ~99%, by the grains of the (100) orientation. The foil is 100 μm thick and contains 0.4 ppm of Pb to facilitate electrochemical etching, which is essential to increase surface area and, hence, capacitance. It is well established, by Rutherford backscattering spectroscopy (RBS), that the surface of the foil is enriched with Pb atoms (Fig.E1.1a). Thus, it has been widely believed that Pb atoms are present at the foil surface as nanoparticles, which break a thin, otherwise, continuous and protective aluminium oxide layer, thereby providing the sites for pit initiation during electrochemical etching in a hot HCl solution. Recently, such Pb particles have been revealed successfully by transmission electron microscopy of ultramicrotomed sections (Fig. E1.1b). However, detailed information on their distribution, which has been a matter of great concern in capacitors industry, has never been revealed until now. Here, the surface of the foil was examined in in-lens SE and high-angle BSE imaging modes. The accelerating voltage was 1.64 kV and the filtering grid bias voltage was 1.50 kV. Thus, high-angle BSEs, having energies of about 1.50–1.64 keV, that are backscattered in a cone with an angle of 15° to the incident electron beam were detected separately in BSE imaging. Magnification of the micrograph is about 400, 000×." @default.
- W7682114 created "2016-06-24" @default.
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- W7682114 date "2009-10-07" @default.
- W7682114 modified "2023-09-26" @default.
- W7682114 title "Application Example 1: Lateral Resolution of in-Lens SE and High-Angle BSE Imaging at Low Accelerating Voltages, Below 2.0 kV" @default.
- W7682114 doi "https://doi.org/10.1007/978-3-642-03160-1_2" @default.
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