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• W776329307 abstract "In nonvolatile random-access memory (RAM) circuits of a proposed type, digital data would be stored in analog form in ferroelectric field-effect transistors (FFETs). This type of memory circuit would offer advantages over prior volatile and nonvolatile types: In a conventional complementary metal oxide/semiconductor static RAM, six transistors must be used to store one bit, and storage is volatile in that data are lost when power is turned off. In a conventional dynamic RAM, three transistors must be used to store one bit, and the stored bit must be refreshed every few milliseconds. In contrast, in a RAM according to the proposal, data would be retained when power was turned off, each memory cell would contain only two FFETs, and the cell could store multiple bits (the exact number of bits depending on the specific design). Conventional flash memory circuits afford nonvolatile storage, but they operate at reading and writing times of the order of thousands of conventional computer memory reading and writing times and, hence, are suitable for use only as off-line storage devices. In addition, flash memories cease to function after limited numbers of writing cycles. The proposed memory circuits would not be subject to either of these limitations. Prior developmental nonvolatile ferroelectric memories are limited to one bit per cell, whereas, as stated above, the proposed memories would not be so limited. The design of a memory circuit according to the proposal must reflect the fact that FFET storage is only partly nonvolatile, in that the signal stored in an FFET decays gradually over time. (Retention times of some advanced FFETs exceed ten years.) Instead of storing a single bit of data as either a positively or negatively saturated state in a ferroelectric device, each memory cell according to the proposal would store two values. The two FFETs in each cell would be denoted the storage FFET and the control FFET. The storage FFET would store an analog signal value, between the positive and negative FFET saturation values. This signal value would represent a numerical value of interest corresponding to multiple bits: for example, if the memory circuit were designed to distinguish among 16 different analog values, then each cell could store 4 bits. Simultaneously with writing the signal value in the storage FFET, a negative saturation signal value would be stored in the control FFET. The decay of this control-FFET signal from the saturation value would serve as a model of the decay, for use in regenerating the numerical value of interest from its decaying analog signal value. The memory circuit would include addressing, reading, and writing circuitry that would have features in common with the corresponding parts of other memory circuits, but would also have several distinctive features. The writing circuitry would include a digital-to-analog converter (DAC); the reading circuitry would include an analog-to-digital converter (ADC). For writing a numerical value of interest in a given cell, that cell would be addressed, the saturation value would be written in the control FFET in that cell, and the non-saturation analog value representing the numerical value of interest would be generated by use of the DAC and stored in the storage FFET in that cell. For reading the numerical value of interest stored in a given cell, the cell would be addressed, the ADC would convert the decaying control and storage analog signal values to digital values, and an associated fast digital processing circuit would regenerate the numerical value from digital values." @default.
• W776329307 created "2016-06-24" @default.
• W776329307 creator A5088406284 @default.
• W776329307 date "2007-04-01" @default.
• W776329307 modified "2023-09-27" @default.
• W776329307 title "Analog Nonvolatile Computer Memory Circuits" @default.
• W776329307 hasPublicationYear "2007" @default.
• W776329307 type Work @default.
• W776329307 sameAs 776329307 @default.
• W776329307 citedByCount "0" @default.
• W776329307 crossrefType "journal-article" @default.
• W776329307 hasAuthorship W776329307A5088406284 @default.
• W776329307 hasConcept C119599485 @default.
• W776329307 hasConcept C127413603 @default.
• W776329307 hasConcept C134146338 @default.
• W776329307 hasConcept C165801399 @default.
• W776329307 hasConcept C172385210 @default.
• W776329307 hasConcept C17744445 @default.
• W776329307 hasConcept C177950962 @default.
• W776329307 hasConcept C194739806 @default.
• W776329307 hasConcept C199539241 @default.
• W776329307 hasConcept C2776531357 @default.
• W776329307 hasConcept C32666082 @default.
• W776329307 hasConcept C34172316 @default.
• W776329307 hasConcept C41008148 @default.
• W776329307 hasConcept C554936623 @default.
• W776329307 hasConcept C87907426 @default.
• W776329307 hasConcept C92855701 @default.
• W776329307 hasConcept C9390403 @default.
• W776329307 hasConcept C98986596 @default.
• W776329307 hasConceptScore W776329307C119599485 @default.
• W776329307 hasConceptScore W776329307C127413603 @default.
• W776329307 hasConceptScore W776329307C134146338 @default.
• W776329307 hasConceptScore W776329307C165801399 @default.
• W776329307 hasConceptScore W776329307C172385210 @default.
• W776329307 hasConceptScore W776329307C17744445 @default.
• W776329307 hasConceptScore W776329307C177950962 @default.
• W776329307 hasConceptScore W776329307C194739806 @default.
• W776329307 hasConceptScore W776329307C199539241 @default.
• W776329307 hasConceptScore W776329307C2776531357 @default.
• W776329307 hasConceptScore W776329307C32666082 @default.
• W776329307 hasConceptScore W776329307C34172316 @default.
• W776329307 hasConceptScore W776329307C41008148 @default.
• W776329307 hasConceptScore W776329307C554936623 @default.
• W776329307 hasConceptScore W776329307C87907426 @default.
• W776329307 hasConceptScore W776329307C92855701 @default.
• W776329307 hasConceptScore W776329307C9390403 @default.
• W776329307 hasConceptScore W776329307C98986596 @default.
• W776329307 hasLocation W7763293071 @default.
• W776329307 hasOpenAccess W776329307 @default.
• W776329307 hasPrimaryLocation W7763293071 @default.
• W776329307 hasRelatedWork W1499276542 @default.
• W776329307 hasRelatedWork W1515343303 @default.
• W776329307 hasRelatedWork W1531784838 @default.
• W776329307 hasRelatedWork W1579620770 @default.
• W776329307 hasRelatedWork W1827799830 @default.
• W776329307 hasRelatedWork W1874998450 @default.
• W776329307 hasRelatedWork W2008534674 @default.
• W776329307 hasRelatedWork W2009297916 @default.
• W776329307 hasRelatedWork W2081795747 @default.
• W776329307 hasRelatedWork W2086950826 @default.
• W776329307 hasRelatedWork W2112193846 @default.
• W776329307 hasRelatedWork W2121151900 @default.
• W776329307 hasRelatedWork W2121354913 @default.
• W776329307 hasRelatedWork W2134113654 @default.
• W776329307 hasRelatedWork W2140379224 @default.
• W776329307 hasRelatedWork W2149345936 @default.
• W776329307 hasRelatedWork W2165592748 @default.
• W776329307 hasRelatedWork W2174738833 @default.
• W776329307 hasRelatedWork W2293164169 @default.
• W776329307 hasRelatedWork W2142130408 @default.
• W776329307 isParatext "false" @default.
• W776329307 isRetracted "false" @default.
• W776329307 magId "776329307" @default.
• W776329307 workType "article" @default.