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- W77640007 abstract "GaAs crystals were implanted with Au, Bi and Pb in a 20-200 keV energy range. Depth profiles were obtained using the Rutherford Backscattering technique. The extracted range parameters (projected range R p and range straggling ΔR p ) were compared with the Ziegler-Biersack-Littmark (ZBL) calculations, which provide an overall good agreement (better than 10%) with the experimental data." @default.
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- W77640007 date "1996-01-01" @default.
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- W77640007 title "Range parameters study of Au, Bi and Pb implanted into GaAs" @default.
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- W77640007 doi "https://doi.org/10.1016/b978-0-444-82334-2.50127-1" @default.
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