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- W779670040 abstract "X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for p-MOSFET are observed. From analysis of gmmax-Vsub, the major cause of n-MOSFET drain current change is the generated positive charge in BOX. On the other hand, the major cause of p-MOSFET drain current change is the radiation induced gate channel modulation by the generated positive charge in sidewall spacer. It is confirmed that the p-MOSFET drain current change is improved by higher PLDD dose. Thinner BOX is also proposed for further radiation hardness improvement." @default.
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- W779670040 date "2015-06-29" @default.
- W779670040 modified "2023-09-27" @default.
- W779670040 title "X-ray Radiation Hardness of Fully-Depleted SOI MOSFETs and Its Improvement" @default.
- W779670040 hasPublicationYear "2015" @default.
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