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- W780603386 abstract "Micro gas sensors including thin film catal) tic type require stress-free memhrancs for etch stop of Si anisotropic etching and sublayer of sensing elements hecause stress is one of the main factors affecting breakdown of thin membranes. This paper reports the effects of deposition conditions on stress and refractive index of films deposited by low pressure c11ernic;rl vapor deposition(L, t'CVI)) 2nd reactve sputtering. In the case of I.PCVI1, the stresses of and NON films arc and , respectibely, and the refractive indices are 3.05 and 152, respectively. In the cxse oi the sputtered SiN, , compressie stress decreased in magnitude and then turned to tensility as increasing proc, ess pressure by lmtorr to 30mtorr and cicreasmg applied power density by to . The hest value of film stress obt;~ined under condition of lOmtorr and in this' experiment was cnnipressive. The refr~ict~ve index decreased from 2 05 to 1 89 as decreasing applied power density by lnitorr to 3Orntorr and increasing process pressure hy to . Stresses of films deposited by both LPCVL) and sputtering decreased as incre;lsing temperature and showed plastic behavior as decreasing temperature" @default.
- W780603386 created "2016-06-24" @default.
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- W780603386 date "1997-01-01" @default.
- W780603386 modified "2023-09-27" @default.
- W780603386 title "Stress and Relective Index of ${SiN}_{x}$ and ${SiN}_{x}/textrm{SiO}_{x}/{SiN}_{x}$ Films as Membranes of Micro Gas Sensor" @default.
- W780603386 hasPublicationYear "1997" @default.
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