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- W781517233 abstract "8 Many high performance amplifiers use power MOSFETs in their output stages, especially in operational amplifier applications whenever high current or power is needed. MOSFETs have advantages over bipolar transistors in amplifier output stage because MOSFETs are majority carrier devices. The result is wide frequency response, fast switching and better linearity than power bipolar transistors. But unlike bipolar circuits, which are relatively tolerant of ionizing radiation, MOSFETs may suffer severe parametric degradation at low total-dose levels. The effects of ionizing radiation on MOSFETs is discussed, and the performance of an amplifier circuit that uses a complementary MOSFET source follower in its output stage is simulated to examine the effect of MOSFET radiation damage on amplifier performance. An increase in power dissipation was the most significant degradation caused by ionizing radiation." @default.
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- W781517233 date "1989-01-01" @default.
- W781517233 modified "2023-09-27" @default.
- W781517233 title "Simulation of radiation-induced parametric degradation in electronic amplifiers" @default.
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