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- W788002909 abstract "The device performance of ZnO-thin film transistors(ZnO-TFTs) with gate dielectrics of and Polyvinylphenol(PVP) having a bottom gate configuration were investigated. ZnO-TFTs can induce high device performance with low intrinsic carrier concentration of ZnO only by controlling gas flow rates without additional doping or annealing processes. The field effect mobility and on/off ratio of ZnO-TFTs with were respectively which is higher than those previously reported. The device adoptable values of the mobility of and the on/off ratio of were evaluated from the device with organic PVP dielectric." @default.
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- W788002909 date "2007-10-01" @default.
- W788002909 modified "2023-09-28" @default.
- W788002909 title "High performance of ZnO thin film transistors using $SiN_x$ and organic PVP gate dielectrics" @default.
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