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- W789040710 abstract "In this thesis, we focus on the development of ultrafast saturable absorber mirrors for applications to ultra-high speed optical signal processing and ultrashort laser pulse generation at 1.55 μm. In the first part, we have developed an ultrafast In₀.₅₃Ga₀.₄₇As -based semiconductor saturable absorber mirror by heavy ion implantation at the elevated temperature of 300 oC. Fe ion has been employed as the implant since it has been shown that Fe²⁺/Fe³⁺ level can act as efficient recombination centers for electrons and holes in In₀.₅₃Ga₀.₄₇As. We studied the carrier lifetime of Fe-implanted sample as a function of ion dose, temperature and annealing time. Apart from the fast carrier lifetime, the characteristics of nonlinear reflectivity for the Fe-implanted sample, such as linear absorption, modulation depth, nonsaturable loss, have are also been investigated under different annealing temperature. Under annealing at 600 oC for 15 s, the Fe-implanted sample with a big modulation depth of 53.9 % and a fast carrier lifetime of 2 ps has been achieved. In the second part, focused ion beam milling has been applied to fabricate an ultra-thin taper structure on crystalline indium phosphide to realize a multi-wavelength vertical cavity photonic device. The appropriate FIB scanning procedures and operating parameters were used to control the target material re-deposition and to minimize the surface roughness of the milled area. The sputtering yield of crystalline indium phosphide target was determined by investigating the relationship between milling depth and ion dose. By applying the optimal experimentally obtained yield and related dose range, we have fabricated an ultra-thin taper structure whose etch depths are precisely and progressively tapered from 25 nm to 55 nm, with a horizontal slope of about 1:13000. The optical characterization of this tapered device confirms the expected multi-wavelength behavior of our device and shows that the optical losses induced by the FIB milling process are negligible. In the third part, we demonstrate that the nonlinear optical response of graphene is resonantly enhanced by incorporating monolayer graphene into a vertical microcavity with a top mirror. A thin Si₃N₄ layer was deposited by a developed PECVD process to act as a protective layer before subsequent top mirror deposition, which allowed preserving the optical properties of graphene. Combining monolayer graphene with a microcavity, a modulation depth of 14.9 % was achieved at an input energy fluence of 108 µJ/cm². This modulation depth is much higher than the value of about 2 % in other works. At the same time, an ultrafast recovery time of 0.7 ps is retained." @default.
- W789040710 created "2016-06-24" @default.
- W789040710 creator A5047916176 @default.
- W789040710 date "2014-11-12" @default.
- W789040710 modified "2023-09-23" @default.
- W789040710 title "Development of ultrafast saturable absorber mirrors for applications to ultrahigh speed optical signal processing and to ultrashort laser pulse generation at 1.55 µm" @default.
- W789040710 hasPublicationYear "2014" @default.
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