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- W789848365 abstract "Effects of plasma composition, ion flux and ion energy on the etch rate, surface morphology and near surface stoichiometry of a single crystalline wafer have been examined in inductively coupled plasma (ICP) discharges. Maximum etch rate was achieved either at relatively high source power or high content conditions in discharges. The etched surfaces showed similar or better RMS roughness values than those of the unetched control sample and the near surface stoichiometry was found not to be affected by ICP etching." @default.
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- W789848365 date "2005-12-01" @default.
- W789848365 modified "2023-09-26" @default.
- W789848365 title "High density plasma etching of single crystalline $La_3Ga_5SiO_{14}$ for wide band high temperature SAW filter devices" @default.
- W789848365 hasPublicationYear "2005" @default.
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