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- W7910323 abstract "Unipolar junctionless transistors are thin-film, heavily doped (typically in the 1019 cm− 3 range) semiconductor resistors with a gate electrode that controls the flow of current between source and drain. Device design is extremely simple as there are no PN junctions. Device operation relies on fully depleting the semiconductor using the workfunction of the gate material to turn the device off. When the device is turned on, current flows through the bulk of the thin film, and can be augmented by an accumulation current contribution. Junctionless transistors are characterized by reduced short-channel effects and present excellent subthreshold slope and low DIBL." @default.
- W7910323 created "2016-06-24" @default.
- W7910323 creator A5002351697 @default.
- W7910323 date "2014-01-01" @default.
- W7910323 modified "2023-09-30" @default.
- W7910323 title "Silicon-on-insulator (SOI) junctionless transistors" @default.
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- W7910323 doi "https://doi.org/10.1533/9780857099259.1.167" @default.
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